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Q.Draw the experimental circuit for the forward and reverse bias condition of a p-n junction diode, and also plot the V-I characteristic curves for both the forward bias and reverse bias.

Uttarakhand UbseUttarakhand Board Intermediate (Class 12) 2025Subjective· 3mImportance★★★★★
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Figure — The stem instructs drawing the experimental forward- and reverse-bias circuits and plotting both V-I curves; t
Figure — The stem instructs drawing the experimental forward- and reverse-bias circuits and plotting both V-I curves; t

Forward bias connects the p-side to the positive terminal (low resistance, exponentially rising current above a threshold); reverse bias connects the p-side to the negative terminal (high resistance, tiny nearly-constant current).

Forward bias circuit: The p-side of the diode is connected to the positive terminal of a battery (through a rheostat/variable resistor to control voltage) and the n-side to the negative terminal, with a milliammeter connected in series (to measure the forward current IfI_f) and a voltmeter connected across the diode (to measure the forward voltage VfV_f). As the applied forward voltage is increased from 0, the current initially rises very slowly, and only after a threshold (knee) voltage (~0.3 V for Ge, ~0.7 V for Si) does the current rise sharply and almost exponentially with further small increases in voltage.

Reverse bias circuit: The p-side of the diode is connected to the negative terminal of the battery and the n-side to the positive terminal, with a microammeter in series (to measure the very small reverse current IrI_r, in µA) and a voltmeter across the diode (to measure reverse voltage VrV_r). As the reverse voltage is increased, only a very small, almost constant reverse saturation current flows (due to minority carriers), until the reverse breakdown voltage is reached, beyond which the current increases suddenly and sharply (avalanche/Zener breakdown).

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