Q.Carbon, silicon and germanium have four valence electrons each. These are characterised by valence and conduction bands separated by energy band gap respectively equal to (Eg)C, (Eg)Si and (Eg)Ge. Which of the following statements is true?
Concept understanding — Band Gap Energy
What is Band Gap Energy? — A First Look
Imagine you have a single atom. Its electrons live in specific, fixed energy levels — like rungs on a ladder. You can't put an electron halfway between two rungs; it's either on one rung or another.
Now bring two atoms close together. Their electron rungs interact and split into two slightly different energies. Bring a billion atoms together — as in a solid crystal — and those original rungs spread into continuous bands of allowed energies, separated by gaps where no electron can exist.
That gap — the forbidden region between two bands — is the band gap.
The Intuition: A Wall Between Two Rooms
Think of the valence band as the ground floor of a building — electrons here are tightly bound to atoms, not free to move. The conduction band is the first floor above — electrons here can roam freely through the crystal, carrying current.
The band gap is the height of the ceiling between these two floors. An electron needs exactly that much energy to jump from the valence band to the conduction band. If you give it less energy, it stays stuck on the ground floor. If you give it exactly the gap energy or more, it can leap up and become a mobile charge carrier.
In a metal, the valence and conduction bands overlap — there is no gap. That's why metals conduct electricity so easily: electrons already have free states available at no energy cost.
The Precise Statement
Band gap energy (Eg) is the minimum energy required to excite an electron from the top of the valence band to the bottom of the conduction band in a solid.
Eg=Econduction band minimum−Evalence band maximum
It is measured in electron volts (eV). One eV is the energy gained by an electron when accelerated through a potential difference of 1 volt — a tiny but convenient unit for atomic-scale energies.
Why Does It Matter?
The band gap determines almost everything about how a material behaves electrically and optically:
| Material type | Typical Eg | Behaviour |
|---|---|---|
| Conductor (metal) | Eg=0 (bands overlap) | Electrons flow freely at room temperature |
| Semiconductor | 0.1 eV<Eg<3 eV | Conducts only when given energy (heat, light) |
| Insulator | Eg>3 eV | Almost no conduction at normal conditions |
A quick rule of thumb: if a material is transparent to visible light, its band gap is larger than about 3.1 eV (the energy of violet light). Diamond (Eg≈5.5 eV) is transparent; silicon (Eg≈1.1 eV) is opaque and shiny.
A Concrete Example: Silicon
Silicon has a band gap of 1.12 eV at room temperature. This means:
- An electron in the valence band needs at least 1.12 eV to jump to the conduction band.
- Visible light photons have energies between 1.8 eV (red) and 3.1 eV (violet). So silicon absorbs most visible light — that's why solar cells are dark.
- At absolute zero, silicon is a perfect insulator. At room temperature, thermal energy (~0.025 eV) is far less than 1.12 eV, but a tiny fraction of electrons still get enough energy from random vibrations to jump the gap — giving silicon its useful semiconducting properties.
Do not confuse band gap energy with the work function. The work function is the energy needed to remove an electron entirely from the solid (into vacuum). Band gap is the energy needed to move an electron from one band to another inside the solid.
The Key Takeaway
Band gap energy is the energy threshold that separates insulating behaviour from conducting behaviour in a solid. It explains why diamond is transparent and silicon is not, why copper conducts electricity effortlessly, and why LEDs emit light of a specific colour (the colour corresponds directly to the band gap energy of the semiconductor).
Band gap energy is a key concept from the NCERT Class 12 Physics Semiconductor Electronics chapter that distinguishes conductors, semiconductors, and insulators, and "band gap energy definition and formula" is a frequently searched topic for CBSE board and JEE Main preparation. This concept also connects directly to LED colour and solar-cell design questions that regularly appear in "semiconductor devices important questions" lists.
Why this formula?
Band Gap Energy: Why the Formula Holds
The band gap energy Eg is the energy difference between the top of the valence band and the bottom of the conduction band in a solid. The key formula is:
Eg=Ec−Ev
where Ec is the minimum energy of the conduction band and Ev is the maximum energy of the valence band.
But why does this simple difference matter? The answer lies in how electrons behave in a crystal.
The Origin of Energy Bands
In an isolated atom, electrons occupy discrete energy levels. When atoms come together to form a solid, their atomic orbitals overlap. According to the Pauli exclusion principle, no two electrons can occupy the same quantum state. So the discrete levels split into a continuum of closely spaced levels — an energy band.
The valence band is formed from the outermost (valence) atomic orbitals. The conduction band is formed from the next higher set of orbitals (typically the empty orbitals above the valence orbitals). Between these bands lies the band gap — a region of forbidden energies where no electron states exist.
Why the Formula Eg=Ec−Ev Is Not Trivial
You might think: "Of course the gap is the difference between the bottom of one band and the top of another." But the real insight is that Ec and Ev are not arbitrary points — they are the extrema of the band structure.
In a periodic crystal, the electron energy E(k) depends on the wavevector k. The valence band has its maximum at some k-point (often at k=0 for direct-gap semiconductors), and the conduction band has its minimum at some k-point. The band gap is:
Eg=minkcEc(kc)−maxkvEv(kv)
This is not just a difference — it's a minimisation over all possible electron momenta.
Why This Difference Determines Conductivity
The band gap controls whether a material is an insulator, semiconductor, or conductor because of the Fermi-Dirac distribution:
f(E)=1+e(E−EF)/kBT1
At absolute zero, all states below the Fermi level EF are filled, and all above are empty. For an intrinsic semiconductor, EF lies in the middle of the band gap. The probability that an electron is thermally excited from the valence band to the conduction band is proportional to e−Eg/2kBT.
The band gap energy Eg appears in the exponent of the carrier concentration formula:
n=p=NcNve−Eg/2kBT
This is why a small change in Eg causes a huge change in conductivity — it's an exponential dependence.
The Physical Meaning of Eg
The band gap is not just a number — it's the minimum energy required to:
- Break a covalent bond in the crystal (creating an electron-hole pair)
- Promote an electron from a bonding state to an antibonding state
- Create a mobile charge carrier
For example, in silicon (Eg=1.12 eV at 300 K), a photon with energy greater than 1.12 eV can be absorbed, exciting an electron from the valence band to the conduction band. This is why silicon is used in solar cells — the band gap matches the solar spectrum.
A common mistake is to think the band gap is simply the difference between the highest and lowest energy levels in the solid. It is not — it is the gap between the top of the filled valence band and the bottom of the empty conduction band. The bands themselves can be several eV wide.
Why Different Materials Have Different Band Gaps
The band gap depends on:
- Atomic spacing: Closer atoms → more orbital overlap → wider bands → smaller gap (or even no gap)
- Atomic number: Heavier atoms have more diffuse orbitals → more overlap → smaller gap
- Crystal structure: Diamond (indirect gap) vs. zinc blende (direct gap) affect the nature of the gap
The tight-binding model gives a simple derivation: for a 1D chain of atoms with nearest-neighbour hopping integral t, the band width is 4t, and the gap between bands depends on the difference in on-site energies Δ and the hopping integrals:
Eg=Δ2+4t2−2t
This shows that the gap is not simply the atomic energy difference — it's modified by the overlap between orbitals.
The Bottom Line
The formula Eg=Ec−Ev is deceptively simple. It captures the fundamental quantum mechanical result that electrons in a periodic potential have allowed and forbidden energy regions. The band gap is the energy threshold that separates insulating behaviour from conducting behaviour, and it determines virtually all optical and electronic properties of semiconductors.
Concept: Band Gap Energy — the energy gap between the valence and conduction bands determines whether a material behaves as an insulator, semiconductor, or conductor. For group 14 elements, the band gap decreases as we move down the group.
Reasoning:
- Carbon (diamond) is an insulator with a very large band gap (~5.5 eV).
- Silicon and germanium are semiconductors; their band gaps are smaller and decrease down the group: Si (~1.1 eV), Ge (~0.7 eV).
- Therefore, the order is: (Eg)C>(Eg)Si>(Eg)Ge.
The correct statement is (c): (Eg)C>(Eg)Si>(Eg)Ge.
The band gap energy decreases as we move down Group 14 in the periodic table. Carbon (diamond) has the largest gap, silicon a smaller one, and germanium the smallest. The correct order is (Eg)C>(Eg)Si>(Eg)Ge, which corresponds to option (c).
The key idea here is that the band gap energy in semiconductors and insulators is not arbitrary — it is directly linked to the strength of the covalent bond and the size of the atom. Carbon, silicon, and germanium all belong to Group 14 and have four valence electrons each. In their solid state, they form a diamond-like crystal structure where each atom is covalently bonded to four neighbours.
Why does the band gap change as we go down the group? The valence electrons in a solid occupy bands — the valence band (filled with bonding electrons) and the conduction band (empty, higher energy). The energy gap between them, Eg, is the minimum energy needed to promote an electron from a bonding state to a conducting state. A larger gap means the material is more insulating; a smaller gap means it is more semiconducting.
The trend is governed by two factors that work together:
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Atomic size and bond length: As we go from C to Si to Ge, the atomic radius increases. This means the distance between neighbouring atoms in the crystal also increases. A longer bond is weaker — the shared electrons are less tightly held. This reduces the splitting between bonding and antibonding energy levels, which directly shrinks the band gap.
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Electronegativity: Carbon is the most electronegative in the group. It holds its valence electrons very tightly, requiring more energy to free them. Silicon and germanium are less electronegative, so their electrons are more easily excited into the conduction band.
The result is a clear, monotonic decrease: diamond (carbon) has a band gap of about 5.5 eV (making it an insulator), silicon has about 1.1 eV, and germanium has about 0.67 eV. So the order is (Eg)C>(Eg)Si>(Eg)Ge.
A common mistake is to think that because germanium is "heavier" it must have a larger gap. In fact, heavier atoms have more diffuse orbitals and weaker bonds, which reduce the gap. The trend is opposite to atomic mass.
Now let’s check the options:
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Option (a) says (Eg)Si<(Eg)Ge<(Eg)C. This is wrong because it places germanium’s gap above silicon’s — the actual order is the reverse.
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Option (b) says (Eg)C<(Eg)Ge>(Eg)Si. This is nonsense — it claims carbon has the smallest gap, which is completely false, and also gives germanium the largest, which is also false.
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Option (c) says (Eg)C>(Eg)Si>(Eg)Ge. This matches the known trend exactly.
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Option (d) says all three are equal. This is clearly wrong — the materials have very different electrical properties (diamond is an insulator, silicon and germanium are semiconductors).
You can remember the trend as: higher up in Group 14 → larger band gap. Carbon (top) is an insulator, silicon and germanium (below) are semiconductors, and tin/lead (further down) are metals (zero gap). This is a classic periodic property.
The correct option is (c).
Method: Trend Analysis Using Periodic Table Position
The band gap energy of an element depends on how tightly the valence electrons are bound to the nucleus. For elements in the same group (Group 14: C, Si, Ge), as you go down the group, the atomic size increases and the valence electrons become less tightly held. This means less energy is needed to jump from the valence band to the conduction band — so the band gap decreases.
Steps:
- Identify the group: Carbon, silicon, and germanium all belong to Group 14 of the periodic table.
- Recall the order of increasing atomic size: C (smallest) → Si → Ge (largest).
- Larger atoms have weaker hold on valence electrons → smaller band gap.
- Therefore, band gap decreases as we move down the group: C has the largest gap, Ge the smallest.
The correct order is:
(Eg)C>(Eg)Si>(Eg)Ge
Answer: Option (c)
Common Mistakes Students Make on This Band Gap Question
Mistake 1: Confusing the trend of band gap with atomic size
Many students think that since carbon is smaller than silicon, and silicon smaller than germanium, the band gap should follow the same order — decreasing with size. That part is actually correct. The mistake comes from reversing the inequality or mixing up which element has the largest gap.
Carbon (diamond) has the largest band gap (~5.5 eV), germanium the smallest (~0.67 eV), and silicon sits in between (~1.12 eV). So the correct order is:
(Eg)C>(Eg)Si>(Eg)Ge
That matches option (c).
Mistake 2: Thinking band gap increases down the group
Some students memorise that conductivity increases down Group 14 (C → Si → Ge → Sn → Pb) and then incorrectly conclude that band gap must also increase. This is backwards. Conductivity increases because band gap decreases — more electrons can jump to the conduction band at room temperature.
Higher conductivity does NOT mean higher band gap. They are inversely related for intrinsic semiconductors.
Mistake 3: Forgetting that carbon (diamond) is an insulator
Carbon in its diamond form has a band gap so large (~5.5 eV) that at room temperature, almost no electrons cross it. That makes it an insulator, not a semiconductor. Students sometimes treat all four elements as semiconductors and then guess wrong.
Diamond (carbon) is an insulator. Silicon and germanium are semiconductors. This alone tells you carbon's band gap is much larger than the other two.
Mistake 4: Picking option (a) because it "looks like" a decreasing trend
Option (a) says (Eg)Si<(Eg)Ge<(Eg)C. This has silicon's gap smaller than germanium's — which is false. The actual decreasing order is C > Si > Ge. Students who vaguely remember "band gap decreases down the group" sometimes write the elements in the wrong sequence.
How to avoid: Always write the elements in order of increasing atomic number: C (6), Si (14), Ge (32). Then recall that band gap decreases as atomic size increases. So C has the largest, Ge the smallest.
Mistake 5: Not recognising that option (b) is nonsense
Option (b) says (Eg)C<(Eg)Ge>(Eg)Si. This claims carbon's gap is smaller than germanium's — which is wildly wrong. Yet some students pick it because they see a "greater than" sign and think it matches some trend they half-remember.
How to avoid: Test the extreme values. If you know diamond is an insulator and germanium is a semiconductor, then carbon's gap must be larger. Any option that says otherwise is automatically wrong.
Final answer: Option (c) (Eg)C>(Eg)Si>(Eg)Ge is correct.
Showing the 12 most recent of 24 on this concept.
- CBSE 2026Set ANNUAL1 markMCQQ.If the energy band gaps for Carbon, Silicon and Germanium are E1, E2 and E3 respectively, then the correct relation between them will be(a) E1 > E2 > E3(b) E1 = E2 = E3(c) E1 < E2 < E3(d) E1 > E2 < E3
›Reveal solutionSolution
Going from carbon (diamond) to silicon to germanium in Group 14, the energy band gap decreases, so E1 (carbon) > E2 (silicon) > E3 (germanium).
Carbon in its diamond form has a very wide energy gap (~5.4 eV), which is why it behaves as an insulator. Silicon has a moderate gap (~1.1 eV) and germanium has a smaller gap still (~0.7 eV), which is why both behave as semiconductors, with germanium being more conductive (thermally more easily excitable) than silicon. So the ordering by band gap is E1 (C) > E2 (Si) > E3 (Ge).
✓Final answer(a) E1 > E2 > E3.
- CBSE 2026Set ANNUAL1 markMCQQ.The width of forbidden band is maximum for(a) metals(b) non-conductors(c) semi-conductors(d) none of these
›Reveal solutionSolution
The forbidden gap (band gap) between valence and conduction bands is essentially zero for metals, small (~1 eV) for semiconductors, and large (>3 eV) for insulators.
In the band theory of solids, electrons occupy allowed energy bands, and the 'forbidden band' (band gap) is the energy range between the valence band (filled with electrons) and the conduction band (where electrons can move freely and conduct current).
- In METALS/conductors, the valence and conduction bands overlap (essentially zero gap), so electrons move into the conduction band with negligible energy input - hence high conductivity.
- In SEMICONDUCTORS, there is a small forbidden gap (of order 1 eV), so a modest amount of thermal or other energy can promote electrons across it.
- In INSULATORS (non-conductors), the forbidden gap is large (typically several eV, e.g. >3 eV), so under normal conditions almost no electrons have enough energy to cross into the conduction band - hence they barely conduct.
So the widest forbidden band belongs to non-conductors (insulators).
✓Final answer(b) non-conductors (insulators).
- CBSE 2026Set ANNUAL1 markQ.What do you understand by energy band?
›Reveal solutionSolution
In an isolated atom electrons occupy sharp, discrete energy levels; in a solid, the overlapping of countless such levels from ~10²³ closely packed atoms produces broad, continuous-looking bands of allowed energies.
In a single isolated atom, electrons can only have certain sharp, discrete energy values. When a huge number of atoms (of order Avogadro's number, ~1023 per cm³) are brought close together to form a solid, their outer electrons interact and each originally-discrete energy level splits into a large number of very closely spaced sub-levels — so close together that they appear to form a continuous range, called an energy band. The band formed from the valence electrons is the valence band, the next higher band (which may be empty or partly filled) is the conduction band, and the energy range between them where no allowed states exist is the forbidden energy gap. This band picture explains why solids behave as conductors, insulators, or semiconductors depending on how these bands are filled and how large the gap between them is.
✓Final answerA closely spaced (near-continuous) range of allowed electron energy levels formed by the merging of discrete atomic levels when many atoms combine to form a solid.
- CBSE 2025Set 55/4/11 markMCQQ.Which of the following is an electrical conductor at room temperature? (A) Sn (B) Mica (C) Si (D) C
›Reveal solutionSolution
The key idea is to classify each material by its electrical conductivity at room temperature. Sn (tin) is a metal and a good conductor, while mica is an insulator and silicon is a semiconductor. The correct option is (A).
Concept and Intuition
Electrical conductivity depends on how freely electrons can move through a material. At room temperature:
- Metals (like tin) have a "sea" of delocalized electrons that flow easily — they are excellent conductors.
- Insulators (like mica) have electrons tightly bound to atoms — they barely conduct.
- Semiconductors (like silicon) have a small band gap; at room temperature, some electrons gain enough energy to jump to the conduction band, making them moderate conductors, but not as good as metals.
The question asks for an electrical conductor — meaning a material that readily allows current flow. Among the options, only one is a metal.
Step-by-Step Solution
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Identify the nature of each substance
- Sn (tin): A metal in Group 14 of the periodic table. It has metallic bonding with free electrons.
- Mica: A silicate mineral — a classic electrical insulator used in capacitors and high-voltage applications.
- Si (silicon): A metalloid, a semiconductor. Its conductivity is low at room temperature (though it increases with doping or heating).
- C (carbon): Can exist as graphite (a conductor) or diamond (an insulator). The problem doesn't specify the allotrope, but in standard exam contexts, "C" alone usually refers to the element in its common form — often graphite is considered, but here the intended answer is clearly tin.
-
Compare conductivities at room temperature
- Tin has a resistivity of about 1.1×10−7Ω⋅m — typical of a metal.
- Mica has resistivity exceeding 1012Ω⋅m — an insulator.
- Silicon has resistivity around 2.3×103Ω⋅m — a semiconductor, not a good conductor at room temperature.
- Carbon (graphite) has resistivity ~1.4×10−5Ω⋅m, which is higher than metals but still conductive. However, in multiple-choice questions for Indian exams (like JEE or NEET), "C" as an element is often treated as a non-metal and not a good conductor unless specified as graphite. The safe and standard answer here is tin.
-
Eliminate options
- (B) Mica: clearly an insulator.
- (C) Si: semiconductor, not a conductor at room temperature.
- (D) C: ambiguous, but in this context, not the best conductor.
- (A) Sn: the only metal, hence the only reliable electrical conductor.
Watch outA common mistake is to think silicon conducts well at room temperature. It does not — its conductivity is millions of times lower than a metal's. Also, carbon in the form of graphite conducts, but the problem likely expects the unambiguous metallic conductor.
TipIn such classification questions, remember: metals are always conductors, insulators are non-conductors, and semiconductors are intermediate. If in doubt, pick the metal.
✓Final answerThe correct option is (A) Sn.
- CBSE 2025Set X11 markMCQQ.The energy gap for silicon is :(a) 0.72 eV(b) 1.1 eV(c) 3 eV(d) 5 eV
›Reveal solutionSolution
(b) 1.1 eV The forbidden energy gap between the valence band and conduction band in silicon is about 1.1 eV at room temperature (for germanium it is about 0.72 eV).
✓Final answer(b) 1.1 eV
The forbidden energy gap between the valence band and conduction band in silicon is about 1.1 eV at room temperature (for germanium it is about 0.72 eV).
- CBSE 2025Set ANNUAL1 markMCQQ.The conduction band is partially empty in(a) non-conductors(b) semi-conductors(c) metals(d) super-conductors
›Reveal solutionSolution
Good conduction requires easily-available empty states just above the highest filled electron levels; in metals the conduction band itself is partially filled (or overlaps the valence band), giving electrons free states to move into under an applied field.
Band theory picture:
-
Non-conductors (insulators): a large energy gap separates a full valence band from an empty conduction band, so essentially no electrons can be thermally excited across - conduction band stays effectively empty.
-
Semiconductors: a small energy gap allows a few electrons to be thermally excited into an otherwise mostly-empty conduction band.
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Metals: the conduction band is partially filled with electrons to begin with (or overlaps the valence band), so there are always free electrons AND free states available - this partial filling is exactly why metals conduct so well even without extra excitation.
-
Superconductors are metals/alloys below their critical temperature exhibiting zero resistance, but this is a special low-temperature quantum state, not simply "a partially empty conduction band" as the defining band-structure answer here.
✓Final answer(c) metals.
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- CBSE 2025Set ANNUAL1 markMCQQ.If temperature of semiconductor is fall, the forbidden energy gap is –(a) increased(b) remain unchanged(c) decreased(d) sometimes increased and sometimes decreased
›Reveal solutionSolution
The forbidden energy gap widens slightly as temperature falls.
For a semiconductor, the width of the forbidden energy gap Eg typically has a small, gradual dependence on temperature: as temperature falls, the band gap increases slightly (e.g. silicon's gap rises from about 1.12 eV at 300 K to about 1.17 eV near 0 K), mainly due to reduced thermal expansion and reduced electron-phonon interaction narrowing the gap less. This is consistent with why a semiconductor's conductivity falls sharply as temperature is lowered — fewer carriers are thermally excited across a wider gap.
✓Final answer(a) increased.
- CBSE 2025Set ANNUAL1 markMCQQ.The energy difference between valence band and conduction band of silicon at room temperature is about(a) 1.1 eV(b) 0.15 eV(c) 0.67 eV(d) 6.7 eV
›Reveal solutionSolution
Silicon's band gap at room temperature is about 1.1 eV, distinguishing it from germanium (~0.7 eV).
The energy gap Eg between the valence band and conduction band determines whether a solid behaves as a conductor, insulator, or semiconductor. For silicon at room temperature (300 K), the standard value is Eg≈1.1 eV (germanium's is about 0.72 eV, option c).
✓Final answerEnergy gap of silicon at room temperature ≈ 1.1 eV — option (a).
- CBSE 2025Set ANNUAL1 markQ.Distinguish between a semiconductor and an insulator based on their energy gap.
›Reveal solutionSolution
The energy gap between the valence and conduction bands is small enough in a semiconductor for thermal energy to promote a few electrons across it, but far too large in an insulator.
In the band theory of solids, electrical conduction requires electrons in the (otherwise full) valence band to be excited across the energy gap Eg into the empty conduction band.
-
Semiconductor: Eg is small, typically about 1 eV or less (e.g. Si ≈1.1 eV, Ge ≈0.7 eV). At room temperature, thermal energy is enough to excite a small but significant number of electrons across this gap, giving the material a modest, temperature-dependent conductivity.
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Insulator: Eg is large, typically more than about 3 eV (e.g. diamond ≈5.4 eV). Thermal energy at ordinary temperatures is nowhere near enough to excite electrons across such a wide gap, so the conduction band stays essentially empty and the material does not conduct.
✓Final answerA semiconductor has a small forbidden energy gap (≈ 1 eV), allowing some thermal excitation of electrons into the conduction band; an insulator has a large energy gap (≳ 3 eV), which thermal energy cannot bridge, so it does not conduct.
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- CBSE 2024Set A11 markQ.The value of energy band in insulators is ———————— than 3 eV. Fill in the blank choosing the appropriate answer from the bracket: (decreasing, interference, helium, greater, diffraction, increasing)
›Reveal solutionSolution
greater (more) than 3 eV.
✓Final answergreater (more) than 3 eV.
In insulators the energy gap (forbidden band) between the valence band and the conduction band is large, greater than about 3 eV, so electrons cannot easily be excited into the conduction band and the material does not conduct.
- CBSE 2024Set ANNUAL1 markMCQQ.Assertion (A): Resistance of conductors is lower than semiconductors. Reason (R): In conductors, energy gap between conduction band and valence band is greater than 3 eV.(a) Both A and R are correct and R is the correct explanation of A.(b) Both A and R are correct but R is not the correct explanation of A.(c) A is correct but R is incorrect.(d) Both A and R are incorrect.
›Reveal solutionSolution
Conductors do have lower resistance than semiconductors, but conductors have essentially zero (overlapping) energy gap, not a gap greater than 3 eV.
Assertion (A) is correct: conductors have much lower resistance (and much higher conductivity) than semiconductors, because conductors have a very large number of free charge carriers. Reason (R) is incorrect: in conductors, the conduction band and valence band actually overlap (energy gap Eg≈0) -- there is no forbidden gap at all. An energy gap greater than 3 eV is instead characteristic of insulators, not conductors. So A is true but R is false, and R does not explain A.
✓Final answer(c) A is correct but R is incorrect.
- CBSE 2024Set A1 markMCQQ.The width of forbidden energy gap in the semiconductor is approximately (A) 1 eV (B) 10 eV (C) 100 eV (D) 0.01 eV
›Reveal solutionSolution
A semiconductor's forbidden energy gap is approximately 1 eV → option (A).
The energy gap between the top of the valence band and the bottom of the conduction band determines whether a material is a conductor, insulator or semiconductor. For semiconductors this gap is small, of the order of ~1 eV (e.g. ≈1.1 eV for silicon, ≈0.7 eV for germanium). Insulators have much larger gaps (several eV), while conductors have overlapping bands (essentially zero gap).
✓Final answer(A) 1 eV.
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