Electronics · Ch 9 — Power Electronics and its Applications
Chapter Summary
Chapter Summary
Chapter recap — Power Electronics and its Applications
Power semiconductor devices
- Power electronics uses solid-state devices as fast, loss-free switches to control and convert electric power. An ideal power device blocks a large voltage, carries a large current, has a near-zero on-state drop and zero off-state leakage, and switches instantly.
- The power diode uses a lightly doped n- drift (epitaxial) layer between p+ and n+ layers for reverse blocking; double injection causes conductivity modulation, keeping the forward drop low. Its forward drop is , and its V–I curve follows the Shockley equation . Reverse behaviour is either non-punch-through or punch-through.
- The power BJT is a current-controlled device working in cut-off, active and saturation regions.
- The SCR is a four-layer, three-terminal pnpn device, understood through the two-transistor analogy. It is turned on by a gate pulse but not turned off by the gate. Gate-open anode current is ; with gate current, . Key points on its characteristic are the break-over voltage , holding voltage , latching current and holding current ().
- The TRIAC is a bidirectional device (MT1, MT2, gate) with symmetric characteristics and four triggering modes, used for AC power control.
- The power MOSFET is a voltage-controlled device (drain, source, insulated gate) with cut-off, ohmic and active modes.
- The IGBT combines a MOSFET input (high input impedance) with a BJT output (low on-resistance); terminals C, G, E.
Applications
- Power devices act as static switches and are wired into four converters: rectifier (AC–DC), AC voltage controller (AC–AC), chopper (DC–DC) and inverter (DC–AC).
- SCR rectifiers with RC triggering control the output by delaying the firing angle : half-wave ; full-wave . …