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Physics · Ch 9 — Semiconductor Electronics

V-I Characteristics of Zener Diode

9.3.6.1

V-I Characteristics of Zener Diode

In FORWARD bias, a Zener diode behaves just like an ordinary p-n junction diode, starting to conduct at roughly 0.7 V. Its distinctive behaviour is in REVERSE bias: as the reverse voltage is increased up to the Zener breakdown voltage VZV_Z, the reverse current stays as small as an ordinary diode's leakage current, but once VZV_Z is reached the current rises extremely sharply while the voltage across the diode stays almost perfectly CONSTANT at VZV_Z throughout the breakdown region -- this near-vertical, constant-voltage segment of the curve is exactly what makes the Zener diode useful as a voltage reference/regulator (9.3.6.2). Key parameters read off the reverse characteristic are: VZV_Z, the Zener breakdown voltage; IZ(min)I_{Z(min)}, the minimum reverse current needed to SUSTAIN breakdown (below this the diode drops out of regulation); and IZ(max)I_{Z(max)}, the maximum current the diode can carry, limited by its maximum power dissipation rating -- exceeding IZ(max)I_{Z(max)} damages the diode. In practice the reverse characteristic is not perfectly vertical, meaning the diode has a small internal resistance, the Zener dynamic (or Zener) impedance -- the inverse of the curve's slope in the breakdown region -- but for an IDEAL Zener diode this resista …

Figure 9.20Zener diode forward and reverse bias circuits and its V-I characteristic

What this figure shows. Panels (a) and (b) show the forward-bias and reverse-bias test circuits respectively, each an ammeter (mA in (a), a wider-range mA in (b) for the sharp breakdown current) in series with the Zener diode and a variable resistor R across a DC supply (0-12 V and 0-15 V respectively), with a voltmeter V across the diode -- structurally identical to the ordinary-diode test circuits of Figures 9.14(a) and 9.15(a). Panel (c) plots the combined V-I characteristic: the first-quadrant portion (forward bias, +IF+I_F vs +VF+V_F) rises past a knee voltage of 0.3 V (germanium) or 0.7 V (silicon) just like an ordinary diode; the third-quadrant portion (reverse bias) stays flat and near zero until the reverse voltage reaches −VZ-V_Z, at which point the curve turns sharply and drops almost vertically downward through the labelled 'Zener breakdown region', bottoming out at IZ(max)I_{Z(max)} -- the near-vertical segment is explicitly labelled 'Constant zener v …