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Physics · Class 12 Science

Ch 9Semiconductor Electronics — Class 12 Physics, concept-first.

Electronics has become part of everyday life -- it underlies mobile phones, computers, televisions, air conditioners, microwave ovens, washing machines, medical diagnostic equipment, and even the ATMs that handle money, alongside its central role in communication systems.

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Key concepts

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P-N Junction Formation

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Chapter contents

The NCERT structure, section by section. Open a section to see its questions, then read the concept-first solution.

Unit Opener

Electronics has become part of everyday life -- it underlies mobile phones, computers, televisions, air conditioners, microwave ovens, washing machines, medical diagnostic equipment, and even the ATMs…

9.1

Energy Bands in Solids

Section 9.1 builds the energy-band picture of a solid from scratch: in an isolated atom the electron energy levels are widely separated and discrete, but when millions of atoms are packed together in…

9.1.1

Energy Band Diagram of Solids

Defines the valence band (the band formed from the filled valence orbitals) and the conduction band (formed from the empty orbitals electrons jump into once energised), separated by the forbidden ener…

9.1.2

Classification of Materials

Having built the band picture, the chapter classifies every solid -- insulator, conductor, or semiconductor -- purely by the width of its forbidden energy gap and by whether the valence and conduction…

9.1.2.1

Insulators

In an insulator the valence and conduction bands are separated by a very large forbidden gap, approximately 6 eV.

9.1.2.2

Conductors

In a conductor the valence band and conduction band actually overlap, so there is no gap at all for an electron to cross -- a large population of electrons sits in the conduction band even with zero a…

9.1.2.3

Semiconductors

A semiconductor sits between the two extremes: it has a narrow forbidden gap, eV, between its valence and conduction bands.

9.2

Types of Semiconductors

Section 9.2 splits semiconductors into two families: the intrinsic (pure) semiconductor, whose small, temperature-limited population of charge carriers is not enough for practical devices, and the ext…

9.2.1

Intrinsic Semiconductors

A semiconductor in its pure form, without any added impurity, is an intrinsic semiconductor. Every atom in the crystal lattice -- silicon has four valence electrons -- is covalently bonded to its four…

9.2.2

Extrinsic Semiconductors

The carrier concentration of an intrinsic semiconductor is far too small for practical electronic devices.

9.2.2.1

N-Type Semiconductor

An n-type semiconductor is made by doping pure germanium or silicon with a pentavalent (group V) element -- phosphorus, arsenic or antimony -- each of which brings five valence electrons to a lattice…

9.2.2.2

P-Type Semiconductor

A p-type semiconductor is made by doping germanium or silicon with a trivalent (group III) element -- boron, aluminium, gallium or indium -- each bringing only three valence electrons to a lattice sit…

9.3

Diodes

Section 9.3 is the heart of the chapter's device physics: it explains how joining a p-type and an n-type crystal creates a p-n junction with a self-built depletion region and barrier potential, how th…

9.3.1

P-N Junction Formation

A p-n junction is formed simply by joining an n-type and a p-type semiconductor crystal together. What happens at that boundary immediately afterwards -- carriers diffusing across, a self-limiting dep…

9.3.1.1

Formation of Depletion Layer

The moment a p-type and n-type crystal are joined, the sharp concentration difference across the boundary drives DIFFUSION: electrons, abundant on the n-side, diffuse across into the p-side, and holes…

9.3.1.2

Junction Potential or Barrier Potential

Recombination of diffusing carriers across the junction only proceeds up to a point, beyond which the depletion layer's own electric field acts as a barrier to further diffusion: an electron trying to…

9.3.2

P-N Junction Diode

A p-n junction diode is the single-junction device formed when one p-type region is fused to one n-type region, with external leads brought out from each side -- the p-side lead is called the anode an…

9.3.2.1

Biasing a Diode: Forward and Reverse Bias

Biasing means supplying external energy (a bias voltage) to the diode's charge carriers to help them overcome -- or be blocked by -- the barrier potential.

9.3.3

Characteristics of a Junction Diode

A diode's behaviour is summarised experimentally by plotting the current through it against the voltage across it -- separately for forward bias (9.3.3.1) and reverse bias (9.3.3.2) -- since the two r…

9.3.3.1

Forward Characteristics

The forward V-I characteristic is obtained by forward-biasing the diode through a current-limiting resistor R, then varying the DC supply and recording the forward voltage V (x-axis) against the resul…

9.3.3.2

Reverse Characteristics

The reverse V-I characteristic uses an identical circuit but with the diode connected in reverse bias: the p-region to the negative terminal and n-region to the positive terminal of the DC supply, wit…

9.3.4

Rectification

Rectification is the process of converting alternating current into direct current, and a p-n junction diode -- which conducts in only one direction -- is the natural device for the job.

9.3.4.1

Half Wave Rectifier

The half wave rectifier circuit consists of a transformer, a single p-n junction diode acting as the rectifying element, and a load resistor .

9.3.4.2

Full Wave Rectifier

The full wave rectifier passes BOTH the positive and negative half cycles of the AC input through the load, in the same direction, so it is called a full wave rectifier.

9.3.5

Breakdown Mechanism

If the reverse bias applied to a p-n junction is increased past a certain point, the junction 'breaks down' and the reverse current rises sharply -- destructive in an ordinary diode, but exploited del…

9.3.5.1

Zener Breakdown

Zener breakdown occurs in HEAVILY doped p-n junctions, which have very narrow depletion layers, of order m.

9.3.5.2

Avalanche Breakdown

Avalanche breakdown occurs in the opposite regime: LIGHTLY doped junctions, which have wide depletion layers.

9.3.6

Zener Diode

A Zener diode is a heavily doped silicon diode, named after its inventor C. Zener, specifically designed to be operated in the (otherwise destructive) reverse breakdown region -- its doping level can…

9.3.6.1

V-I Characteristics of Zener Diode

In FORWARD bias, a Zener diode behaves just like an ordinary p-n junction diode, starting to conduct at roughly 0.7 V.

9.3.6.2

Zener Diode as a Voltage Regulator

A Zener diode operating in its breakdown region maintains a constant output voltage across a load even when the input voltage or the load current varies -- this is the classic Zener shunt voltage regu…

9.3.7

Optoelectronic Devices

Optoelectronics is the branch of device physics dealing with components that convert electrical energy into light or light into electrical energy through a semiconductor junction.

9.3.7.1

Light Emitting Diode (LED)

An LED is a p-n junction diode that emits visible or invisible light when it is FORWARD biased -- since electrical energy is converted directly into light energy, this process is called electrolumines…

9.3.7.2

Photodiodes

A photodiode is a p-n junction diode that converts an optical signal INTO an electrical signal -- the operating principle is essentially the inverse of the LED's, and (unlike the LED) a photodiode is…

9.3.7.3

Solar Cell

A solar cell, also known as a photovoltaic cell, converts light energy directly into electrical energy (an emf) via the photovoltaic effect -- it is essentially a large-area p-n junction designed to g…

9.4

The Bipolar Junction Transistor (BJT)

William Shockley invented the modern bipolar junction transistor in 1951; being a semiconductor device with very low heat loss, it triggered a technological revolution that eventually let thousands of…

9.4.1

Transistor Circuit Configurations

A transistor circuit has only three terminals but needs both an input and an output loop, so one terminal must necessarily be shared (common) between the two loops -- this gives exactly three possible…

9.4.1.1

Common-Base (CB) Configuration

In the common-base configuration, the BASE terminal is common to both the input and the output circuit loop.

9.4.1.2

Common-Emitter (CE) Configuration

In the common-emitter configuration, the EMITTER terminal is common to both the input and output loops.

9.4.1.3

Common-Collector (CC) Configuration

In the common-collector configuration, the COLLECTOR terminal is common to both the input and output loops.

9.4.2

Transistor Action in the Common Base Mode

In the forward active mode, the emitter-base junction is forward biased by (shrinking that junction's depletion region) while the collector-base junction is simultaneously reverse biased by (widening…

9.4.3

Static Characteristics in Common Emitter Mode

Knowing a transistor's input resistance, output resistance and current gain is essential for using it effectively in real circuits, and all three are read off its STATIC characteristic curves, measure…

9.4.3.1

Input Characteristics

The input characteristic plots the relationship between base current and base-to-emitter voltage , measured at several fixed values of collector-to-emitter voltage : is first set to a chosen value (ab…

9.4.3.2

Output Characteristics

The output characteristic plots the collector current against the collector-to-emitter voltage , at several fixed values of base current : is first set to a chosen value, then is stepped up and the re…

9.4.3.3

Current Transfer Characteristics

The current transfer characteristic plots the variation of collector current against base current , at a fixed collector-emitter voltage .

9.4.3.4

Relation Between $\alpha$ and $\beta$

The two current-gain figures defined for the two configurations -- in common base, in common emitter -- are not independent; they are related by , equivalently .

9.4.4

Transistor as a Switch

Operated in its saturation and cut-off regions, a transistor behaves like an electronic switch that a small control signal at the base can turn fully ON or fully OFF. When a HIGH input voltage (e.g.

9.4.5

Operating Point

The operating point (also called the Q-point or quiescent point) is the specific point on a transistor's output characteristics at which it is set up to operate for a given application.

9.4.6

Transistor as an Amplifier

A transistor biased in its active region can amplify a weak input signal -- amplification means increasing a signal's amplitude/strength.

9.4.7

Transistor as an Oscillator

An electronic oscillator converts DC energy into AC energy of a chosen (usually high) frequency, ranging from a few Hz to several MHz -- unlike an amplifier, an oscillator needs NO external AC input s…

9.5

Digital Electronics

Digital electronics is the sub-branch of electronics dealing specifically with digital signals -- signals restricted to a small number of discrete states rather than varying continuously -- and is use…

9.5.1

Analog and Digital Signals

There are two fundamentally different kinds of electrical signal. An ANALOG signal is a continuously varying voltage or current with respect to time -- rectifier outputs (9.3.4) and transistor amplifi…

9.5.2

Logic Gates

A logic gate is an electronic circuit that operates on digital signals -- it is the basic building block of essentially every digital system, taking one or more binary inputs and producing a single bi…

AND Gate

The two-input AND gate has inputs A and B and output Y, related by the Boolean equation -- this '.' operator performs LOGICAL multiplication, distinct from ordinary arithmetic multiplication even thou…

OR Gate

The two-input OR gate has inputs A and B and output Y, related by the Boolean equation -- this '+' operator performs LOGICAL addition, distinct from ordinary arithmetic addition (in particular in Bool…

NOT Gate

The single-input NOT gate has input A and output Y, related by the Boolean equation -- the overbar denotes logical COMPLEMENT (also called inversion or negation).

NAND Gate

The two-input NAND gate ('NOT-AND') has inputs A and B and output Y, related by the Boolean equation -- literally an AND gate followed by a NOT gate, and its output is exactly the COMPLEMENT of what a…

NOR Gate

The two-input NOR gate ('NOT-OR') has inputs A and B and output Y, related by the Boolean equation -- literally an OR gate followed by a NOT gate, its output the exact COMPLEMENT of what an ordinary O…

Ex-OR Gate

The two-input Ex-OR (exclusive-OR) gate has inputs A and B and output Y, related by the Boolean equation -- the symbol denotes the Ex-OR operation directly, and the expanded form shows it can also be…

9.6

Boolean Algebra

Boolean algebra, formulated by George Boole in 1854, is a system of algebra built entirely around a choice between exactly two options -- yes/no, or high/low -- represented by the binary digits 0 and…

9.7

De Morgan's Theorem

De Morgan's theorems are two complementary identities linking the AND, OR and NOT operations -- proved directly using truth tables in the two sub-sections below -- and they carry an important circuit-…

9.7.1

De Morgan's First Theorem

The first theorem states: the complement of the SUM of two logical inputs equals the PRODUCT of their individual complements, .

9.7.2

De Morgan's Second Theorem

The second theorem states: the complement of the PRODUCT of two logical inputs equals the SUM of their individual complements, .

9.7.3

Integrated Chips (ICs)

An integrated circuit -- also called an IC, a chip, or a microchip -- packs thousands to millions of transistors, resistors and capacitors onto a single small flat piece of semiconductor material, nor…

SUMMARY

The chapter's own bullet-point summary restates every major definition and law in condensed one-line form: energy bands classify solids into metals/insulators/semiconductors; electrons are majority ca…

CONCEPT MAP

A branching diagram roots the whole unit at two parallel top-level strands born from the band-theory classification -- Metals, Semiconductors and Insulators under 'Energy Bands' -- with the Semiconduc…

EVALUATION

46 Q

The chapter's own end-of-unit assessment, printed in four labelled parts exactly as the book divides them: I.

+I. Multiple Choice Questions15 questions
  1. Q1The barrier potential of a silicon diode is approximately, (a) 0.7 V (b) 0.3 V (c) 2.0 V (d) 2.2 VFree
  2. Q2Doping a semiconductor results in (a) The decrease in mobile charge carriers (b) The change in chemical properties (c) The change in the cry…Free
  3. Q3A forward biased diode is treated as (a) An open switch with infinite resistance (b) A closed switch with a voltage drop of 0V (c) A closed…Free
  4. Q4If a half-wave rectified voltage is fed to a load resistor, which part of a cycle the load current will flow? (a) $0^\circ$-$90^\circ$ (b) $…Preview
  5. Q5The primary use of a zener diode is (a) Rectifier (b) Amplifier (c) Oscillator (d) Voltage regulatorPreview
  6. Q6The principle in which a solar cell operates (a) Diffusion (b) Recombination (c) Photovoltaic action (d) Carrier flowPreview
  7. Q7The light emitted in an LED is due to (a) Recombination of charge carriers (b) Reflection of light due to lens action (c) Amplification of l…Preview
  8. Q8When a transistor is fully switched on, it is said to be (a) Shorted (b) Saturated (c) Cut-off (d) OpenPreview
  9. Q9The specific characteristic of a common emitter amplifier is (a) High input resistance (b) Low power gain (c) Signal phase reversal (d) Low…Preview
  10. Q10To obtain sustained oscillation in an oscillator, (a) Feedback should be positive (b) Feedback factor must be unity (c) Phase shift must be…Preview
  11. Q11If the input to the NOT gate is A = 1011, its output is (a) 0100 (b) 1000 (c) 1100 (d) 0011Preview
  12. Q12The electrical series circuit in digital form is (a) AND (b) OR (c) NOR (d) NANDPreview
  13. Q13(NEET) Which one of the following represents a forward bias diode? The four options are circuit diagrams (a diode and a resistor R with two…Preview
  14. Q14(NEET) The given electrical network, with inputs A and B and output Y, is equivalent to which single logic gate -- (a) AND gate (b) OR gate…Preview
  15. Q15(NEET 2016) The output of the following circuit is 1 when the input ABC is -- (a) 101 (b) 100 (c) 110 (d) 010. The exact gate-network topolo…Preview
+II. Short Answer Questions14 questions
  1. Q1Define electron motion in a semiconductor.Free
  2. Q2Distinguish between intrinsic and extrinsic semiconductors.Free
  3. Q3What do you mean by doping?Free
  4. Q4How electron-hole pairs are created in a semiconductor material?Preview
  5. Q5A diode is called as a unidirectional device. ExplainPreview
  6. Q6What do you mean by leakage current in a diode?Preview
  7. Q7Draw the output waveform of a full wave rectifier.Preview
  8. Q8Distinguish between avalanche and zener breakdown.Preview
  9. Q9Discuss the biasing polarities in an NPN and PNP transistors.Preview
  10. Q10Explain the current flow in a NPN transistorPreview
  11. Q11What is the phase relationship between the AC input and output voltages in a common emitter amplifier? What is the reason for the phase reve…Preview
  12. Q12Explain the need for a feedback circuit in a transistor oscillator.Preview
  13. Q13Give circuit symbol, logical operation, truth table, and Boolean expression of AND, OR, NOT, NAND, NOR, and EX-OR gatesPreview
  14. Q14State De Morgan's first and second theorems.Preview
+III. Long Answer Questions12 questions
  1. Q1Elucidate the formation of a N-type and P-type semiconductors.Free
  2. Q2Explain the formation of PN junction diode. Discuss its V-I characteristics.Free
  3. Q3Draw the circuit diagram of a half wave rectifier and explain its workingFree
  4. Q4Explain the construction and working of a full wave rectifier.Preview
  5. Q5What is an LED? Give the principle of operation with a diagram.Preview
  6. Q6Write notes on Photodiode.Preview
  7. Q7Explain the working principle of a solar cell. Mention its applications.Preview
  8. Q8Sketch the static characteristics of a common emitter transistor and bring out the essence of input and output characteristics.Preview
  9. Q9Describe the function of a transistor as an amplifier with the neat circuit diagram. Sketch the input and output wave form.Preview
  10. Q10Transistor functions as a switch. Explain.Preview
  11. Q11State Boolean laws. Elucidate how they are used to simplify Boolean expressions with suitable example.Preview
  12. Q12State and prove De Morgan's First and Second theorems.Preview
+IV. Numerical Problems5 questions
  1. Q1The given circuit has two ideal diodes $D_1$ and $D_2$ connected as shown in the figure: a resistor $R_1=3\ \Omega$ in series with a 10 V so…Free
  2. Q2Four silicon diodes $D_1$-$D_4$ and a resistor are connected as shown in the figure (points A, B, C, D, E, F, with a source across the netwo…Free
  3. Q3Assuming $V_{CEsat}=0.2$ V and $\beta=50$, find the minimum base current ($I_B$) required to drive the transistor given in the figure to sat…Preview
  4. Q4A transistor having $\alpha=0.99$ and $V_{BE}=0.7$ V is given in the circuit, biased from a +12 V supply through a network of one 10 k$\Omeg…Preview
  5. Q5In the circuit shown in the figure, the BJT has a current gain ($\beta$) of 50, with bias resistors of 60 k$\Omega$ and 500 k$\Omega$ and a…Preview

Book for References

ICT Corner

A hands-on activity box on the topic of logic gates, titled 'Semiconductor electronics', directing students to the free online simulator at circuitverse.org/simulator to construct, manipulate and simu…

Sample & Board Papers

Sample papers and previous-year board questions for this subject.

+Show 42 questions42 questions
  1. Q1Since the input impedance of an ideal operational amplifier is infinite : (a) its input current is zero (b) its output resistance is high (c…Preview
  2. Q2In a Colpitt's oscillator circuit : (a) capacitive feedback is used (b) tapped coil is used (c) no tuned LC circuit is used (d) no capacitor…Preview
  3. Q3The emitter base junction of a given transistor is forward biased and its collector base junction is reverse biased. If the base current is…Preview
  4. Q4Define bandwidth of an amplifier.Preview
  5. Q5Draw the circuit diagram of a summing amplifier using an operational amplifier.Preview
  6. Q6What is an intrinsic semi conductor ? Give two examples.Preview
  7. Q7State and prove De-Morgan's theorems.Preview
  8. Q8What is meant by feedback ? Derive an expression for voltage gain of an amplifier with negative feedback.Preview
  9. Q9In the forward bias characteristic curve, a diode appears as : (a) an OFF switch (b) a high resistance (c) an ON switch (d) a capacitorPreview
  10. Q10The input values A and B of the Boolean expression $\overline{(A+B)}\cdot\overline{(A\cdot B)} = 1$ are respectively : (a) 1, 0 (b) 0, 0 (c)…Preview
  11. Q11In an N-type semiconductor, there are : (a) immobile positive ions (b) immobile negative ions (c) holes as majority carriers (d) no minority…Preview
  12. Q12Prove the Boolean identity : $(A+B)(A+C) = A + BC$.Preview
  13. Q13What are the advantages of negative feedback ?Preview
  14. Q14State De-Morgan's theorems.Preview
  15. Q15Draw the circuit diagram of OR-gate using diodes.Preview
  16. Q16Deduce the relation between the current amplification factors $\alpha$ and $\beta$ of a transistor.Preview
  17. Q17What is rectification ? Explain the working of a bridge rectifier.Preview
  18. Q18According to the laws of Boolean algebra, the expression $(A + AB)$ is equal to : (a) B (b) $\overline{A}$ (c) A (d) ABPreview
  19. Q19Avalanche breakdown is primarily dependent on the phenomenon of : (a) doping (b) recombination (c) collision (d) ionisationPreview
  20. Q20State De-Morgan's theorems.Preview
  21. Q21Type of material which emits white light in LED : (a) GaInN (b) SiC (c) AlGaP (d) GaAsPPreview
  22. Q22The given electrical network is equivalent to : [figure: two 2-input NAND gates in a first stage — the top gate's two inputs are both drawn…Preview
  23. Q23What do you mean by doping ?Preview
  24. Q24In the circuit shown in the figure, the input voltage $V_i$ is 20 V, $V_{BE} = 0$ V and $V_{CE} = 0$ V, what are the values of $I_B$, $I_C$…Preview
  25. Q25(a) Explain the working of the transistor as an oscillator. **OR** (b) Find out the phase relationship between voltage and current in a pure…Preview
  26. Q26What do you mean by Doping ?Preview
  27. Q27Draw the circuit diagram of NPN transistor in Common Emitter Configuration.Preview
  28. Q28(a) Explain the construction and working of full wave rectifier. **OR** (b) Explain the construction and working of transformer.Preview
  29. Q29The Zener diode is primarily used as : (a) Oscillator (b) Rectifier (c) Voltage regulator (d) AmplifierPreview
  30. Q30What is value of Forbidden Energy gap for silicon at room temperature ? (a) 0.3 eV (b) 0.7 eV (c) 0.9 eV (d) 1.1 eVPreview
  31. Q31Draw the circuit diagram of a full wave rectifier.Preview
  32. Q32The given circuit has two ideal diodes connected as shown in figure below. Calculate the current flowing through the resistance $R_1$. ![Pri…Preview
  33. Q33The principle based on which a solar cell operates is : (a) Photovoltaic action (b) Diffusion (c) Carrier flow (d) RecombinationPreview
  34. Q34The value of forbidden energy gap for Si at room temperature is : (a) 1.1 V (b) 0.7 eV (c) 1.1 eV (d) 0.7 VPreview
  35. Q35What is meant by biasing ? Mention its types.Preview
  36. Q36Determine the wavelength of the light emitted from LED, which is made up of GaAsP semiconductor, whose forbidden energy gap is 1.875 eV. Men…Preview
  37. Q37In the combination of the following gates, write the Boolean equation for output Y in terms of input A, B, C. [figure: logic circuit — input…Preview
  38. Q38Draw the circuit diagram for a forward biased p-n junction diode.Preview
  39. Q39Distinguish between intrinsic and extrinsic semiconductors.Preview
  40. Q40The principle based on which a solar cell operates is : (a) Photovoltaic action (b) Diffusion (c) Carrier flow (d) RecombinationPreview
  41. Q41Draw the schematic circuit diagram for a NPN transistor in common emitter configuration.Preview
  42. Q42Give the circuit symbol, logical operation, truth table and Boolean expression of AND gate.Preview