Q.Temperature dependence of resistivity of semiconductors, insulators and metals is significantly based on the following factors:
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Start your 14-day free trial to unlock the full solution →Resistivity is , so it can only depend on temperature through quantities that genuinely change with : the carrier number density (a) and the mean time between collisions (b). Sample length (c) and carrier mass (d) are not temperature-dependent physical mechanisms.
Starting point: what actually depends on
From the microscopic (Drude) model of conduction,
where is the number density of charge carriers, the carrier charge, the carrier mass, and the average time between two successive collisions (relaxation time). Since and are fixed constants of the carrier, any temperature dependence of must come through and/or .
(a) Number of charge carriers, — genuinely -dependent
In a metal, essentially all the free electrons are already in the conduction band, so barely changes with . But in a semiconductor or insulator, the valence band is full and the conduction band is empty at ; carriers appear only when thermal energy excites an electron across the band gap :
As rises, increases sharply (exponentially), which is exactly why semiconductor/insulator resistivity falls so fast with temperature. This makes (a) a real, significant temperature-dependence mechanism.
(b) Time between successive collisions, — genuinely -dependent
In a metal, is fixed, but the lattice ions vibrate more vigorously as increases, scattering the drifting electrons more often. This shortens the mean free time between collisions (roughly at ordinary temperatures), which is exactly why metallic resistivity rises with temperature. This makes (b) the dominant mechanism for metals.
(c) Length of material — not a real mechanism …
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