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Physics · Ch 9 — Semiconductor Electronics

Output Characteristics

9.4.3.2

Output Characteristics

The output characteristic plots the collector current ICI_C against the collector-to-emitter voltage VCEV_{CE}, at several fixed values of base current IBI_B: IBI_B is first set to a chosen value, then VCEV_{CE} is stepped up and the resulting ICI_C recorded, and the whole sweep is repeated for several different values of IBI_B, giving a family of curves. Four important regions are read off this family. (i) SATURATION region: as VCEV_{CE} rises above 0 V, ICI_C rises rapidly to an almost-IBI_B-independent value in a nearly ohmic region (labelled OA on the curve) up to the so-called knee voltage; transistors are always operated ABOVE this knee voltage in normal (non-switch) use. (ii) CUT-OFF region: even after IBI_B is reduced all the way to zero, a small collector current still exists, due to minority carriers crossing the collector-base junction plus a surface leakage current ICEOI_{CEO} -- this is the cut-off region, so called because the main (base-current-driven) collector current is effectively cut off. (iii) ACTIVE region: here the emitter-base junction is forward biased and collector-base junction reverse biased (exactly the forward-active bias condition of 9.4.2), and ICI_C is nearly flat/independent of VCEV_{CE} for a given IBI_B -- this is the region used for voltage, current and power amplification. (iv) BREAKDOWN region: if VCEV_{CE} is pushed beyond the manufacturer's rated value, ICI_C rises enormously and causes junction breakdown, potentially damaging the transistor. The output impedance ror_o is defined as the ratio of a small change in VCEV_{CE} to the resulting small change in ICI_C, at fixed IBI_B: ro=(ΔVCE/ΔIC)IBr_o=(\Delta V_{CE}/\Delta I_C)_{I_B}; unlike the input impedance, the output impedance for a common-emitter transistor is very LOW (the active-region curves are nearly flat, i.e. large ΔIC\Delta I_C for small ΔVCE\Delta V_{CE} is NOT what low output impedance means -- rather it is that the curve is nearly flat, so ΔIC\Delta I_C is small even for a sizeable swing in VCEV_{CE}, giving a large ΔVCE/ΔIC\Delta V_{CE}/\Delta I_C... note the text states the output impedance is low, consistent with treating the active-region slope ΔIC/ΔVCE\Delta I_C/\Delta V_{CE} itself a …

Figure 9.32Output characteristics of an NPN transistor in common emitter configuration

What this figure shows. Collector-emitter voltage VCEV_{CE} runs along the x-axis and collector current ICI_C up the y-axis, with a family of five curves plotted for IB=0,1,2,3,4I_B=0,1,2,3,4 mA; each curve rises almost vertically from the origin (the labelled 'Saturation region'), bends over into a nearly flat, slightly rising segment (the labelled 'Active region', with a small slope triangle ΔIC/ΔVCE\Delta I_C/\Delta V_{CE} marking where the output impedance is read off), and the IB=0I_B=0 curve alone sits almost flat along the x-axis, explicitly labelled the 'Cut …

Figure 9.33Current transfer characteristics of an NPN transistor in common emitter configuration

What this figure shows. Base current IBI_B (μ\muA) runs along the x-axis and collector current ICI_C (mA) up the y-axis, plotted at constant VCEV_{CE}: the curve is essentially a straight line through a small positive y-intercept (the common-emitter leakage current ICEOI_{CEO}, present even when IB=0I_B=0), with a slope triangle ΔIC/ΔIB\Delta I_C/\Delta I_B marked to show graphically how the forward current gain β\beta is read directly off this curve as its slope. …