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Q.(a) Describe briefly the functions of the three segments of n-p-n transistor.

(b) Draw the circuit arrangement for studying the output characteristics of n-p-n transistor in CE configuration. Explain how the output characteristics is obtained.
(OR)
Draw the circuit diagram of a full wave rectifier and explain its working. Also, give the input and output waveforms.
CBSECBSE Class XII Board 2019Subjective· 3mImportance★★★★★
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Part (a): Emitter (heavily doped) injects electrons, thin lightly-doped base controls the flow, collector gathers them; CE output characteristics are ICI_C–VCEV_{CE} curves at fixed IBI_B with saturation, active and cut-off regions. Part (b): A full-wave rectifier (centre-tapped transformer + two diodes) rectifies both halves of the AC input, giving pulsating DC of average 2Vmπ\dfrac{2V_m}{\pi} and ripple frequency 2f2f.

Circuit arrangement for studying the output characteristics of an n-p-n transistor in CE configuration: base-emitter loop with V_BB, rheostat R_B and a microammeter (I_B) forward-biasing the base, and collector-emitter loop with V_CC, R_C, a milliammeter (I_C) and a voltmeter (V_CE) reverse-biasing the collector, with the emitter common to both loops.
Circuit arrangement for studying the output characteristics of an n-p-n transistor in CE configuration: base-emitter loop with V_BB, rheostat R_B and a microammeter (I_B) forward-biasing the base, and collector-emitter loop with V_CC, R_C, a milliammeter (I_C) and a voltmeter (V_CE) reverse-biasing the collector, with the emitter common to both loops.

Part (a)

Functions of the three segments

An n-p-n transistor is two p-n junctions sharing a common central p-region.

  • Emitter: most heavily doped so it can inject a large number of majority carriers (electrons) into the base. Its job is to supply charge carriers.
  • Base: made very thin and lightly doped. Only a tiny fraction of the injected electrons recombine here (giving a small base current); the rest are swept on to the collector. The base controls the collector current.
  • Collector: moderately doped, physically the largest region so it can dissipate the heat generated. It collects the carriers that diffuse across the base.

Output characteristics (CE)

Circuit: connect a variable supply VBBV_{BB} with a resistor RBR_B to forward-bias the base–emitter junction, and a variable supply VCCV_{CC} with RCR_C to reverse-bias the collector–emitter path. The emitter terminal is common to both loops.

Method: fix the base current IBI_B using VBBV_{BB}; then increase VCEV_{CE} in steps using VCCV_{CC} and measure the collector current ICI_C each time. Repeat the whole run for several fixed IBI_B values.

Result: plotting ICI_C against VCEV_{CE} for each IBI_B gives a family of curves:

  • Saturation region — for small VCEV_{CE}, ICI_C rises sharply.
  • Active region — ICI_C becomes almost independent of VCEV_{CE} and IC≈βIBI_C \approx \beta I_B; the transistor works as an amplifier here. …

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