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Question Bank (2 marks) · Q15

Q.What is I_DSS? Write the relation between I_D, I_DSS, V_GS, and V_P.

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[!TLDR]

IDSSI_{DSS} is the maximum drain current at VGS=0V_{GS} = 0, and the drain current at any VGSV_{GS} is ID=IDSS(1−VGSVP)2I_D = I_{DSS}\left(1 - \tfrac{V_{GS}}{V_P}\right)^2.

IDSSI_{DSS} stands for the drain-to-source saturation current. It is the largest drain current a JFET can pass in the saturation region, and it occurs when the gate-to-source voltage is zero, i.e. when the gate exerts no controlling reverse bias. As the reverse VGSV_{GS} is increased the channel narrows and IDI_D falls below IDSSI_{DSS}. The way IDI_D depends on VGSV_{GS} is given by Shockley's equation,

ID=IDSS(1−VGSVP)2I_D = I_{DSS}\left(1 - \frac{V_{GS}}{V_P}\right)^2 …

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