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Question 44 of 55

Q.(a) Define current density and relaxation time. [1]

(b) Derive an expression for resistivity of a conductor in terms of number density of charge carriers in conductor and relaxation time. [2]
(c) Two electric cells of emf E₁ and E₂ and internal resistances r₁ and r₂ respectively are joined in parallel, so as to give current in the same direction. Establish expressions for equivalent emf and internal resistance of the combination. [2] OR
(a) Write the principle of potentiometer. [1]
(b) How will you compare the emfs of two primary cells using a potentiometer? Explain with a circuit diagram. [2]
(c) Using Kirchhoff's law, determine the value of current I₁ in the given electric network. [2]
West Bengal WbchseWest Bengal HS (WBCHSE) Board 2024Subjective· 5mImportance★★★★★
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Current density and relaxation time are defined first; combining the microscopic drift-velocity picture with these definitions gives resistivity in terms of carrier density and relaxation time; and combining two cells (with the same terminal current direction) in parallel via Kirchhoff's laws gives a single equivalent cell with combined emf and reduced internal resistance.

  1. Definitions: Current density J⃗\vec{J} at a point in a conductor is the current flowing per unit cross-sectional area, taken perpendicular to the direction of current flow: J=I/AJ = I/A (a vector, pointing along the direction of conventional current flow). Its SI unit is A/m². Relaxation time τ\tau is the average time interval between two successive collisions of a free (conduction) electron with the fixed ions/atoms of the conductor's lattice, as the electron drifts under an applied electric field.
  2. Resistivity in terms of nn and τ\tau: Under an applied field EE, each free electron (charge −e-e, mass mm) experiences a force −eE-eE, giving acceleration a=−eE/ma = -eE/m. Between collisions (average time τ\tau), an electron starting from rest (on average, after a randomising collision) gains an average drift velocity vd=aτ=eEτmv_d = a\tau = \dfrac{eE\tau}{m} (magnitude) If nn is the number density of free electrons, the current density is J=nevd=ne×eEτm=ne2τmEJ = nev_d = ne \times \dfrac{eE\tau}{m} = \dfrac{ne^2\tau}{m}E Comparing with the microscopic form of Ohm's law, J=σE=E/ρJ = \sigma E = E/\rho: 1ρ=ne2τm⇒ρ=mne2τ\dfrac{1}{\rho} = \dfrac{ne^2\tau}{m} \quad\Rightarrow\quad \rho = \dfrac{m}{ne^2\tau} This shows resistivity is inversely proportional to both the free-electron density and the relaxation time — a material with fewer free electrons, or with electrons colliding more often (smaller τ\tau), has higher resistivity.
  3. Two cells in parallel: Let two cells of emf ε1\varepsilon_1, ε2\varepsilon_2 and internal resistances r1r_1, r2r_2 be connected in parallel between two common terminals A and B, both driving current in the same direction into the external circuit, and let I1I_1, I2I_2 be the currents supplied by each cell, with I=I1+I2I = I_1+I_2 the total current delivered, and VV the common terminal potential difference across A, B. For cell 1: V=ε1−I1r1⇒I1=ε1−Vr1V = \varepsilon_1 - I_1 r_1 \Rightarrow I_1 = \dfrac{\varepsilon_1 - V}{r_1} …

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