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Physics · Ch 8 — Electrostatics

Capacitance of a Parallel Plate Capacitor With a Dielectric Slab Between the Plates

8.10.2

Capacitance of a Parallel Plate Capacitor With a Dielectric Slab Between the Plates

Now insert a dielectric slab of thickness t (with t<dt<d, so it fills only PART of the gap, in general) between the two plates. BEFORE the slab is inserted, the field in the gap is E0=σ/ϵ0E_0=\sigma/\epsilon_0 (from section 8.10.1) and the potential difference is V0=E0dV_0=E_0d.

Once the slab is inserted, the applied field E0E_0 polarises it (section 8.8), inducing a layer of charge −Qp-Q_p on the slab's near face and +Qp+Q_p on its far face; these induced surface charges themselves set up an internal POLARISATION field Ep=Qp/(Aϵ0)E_p=Q_p/(A\epsilon_0) that points OPPOSITE to E0E_0, so the NET field actually present inside the dielectric material is the difference, E=E0−EpE=E_0-E_p. Writing this reduction using the dielectric constant kk as E=E0/kE=E_0/k (the definition already established in section 8.8) lets EpE_p itself be expressed as Ep=E0(1−1/k)E_p=E_0(1-1/k).

Because the reduced field E=E0/kE=E_0/k exists only across the slab's own thickness t, while the FULL, undiminished field E0E_0 still exists across the remaining air gap of thickness (d−t)(d-t), the total potential difference across the WHOLE plate separation becomes V=E0(d−t)+E0kt=E0[(d−t)+tk]=Qϵ0A[(d−t)+tk]V=E_0(d-t)+\dfrac{E_0}{k}t=E_0\left[(d-t)+\dfrac{t}{k}\right]=\dfrac{Q}{\epsilon_0A}\left[(d-t)+\dfrac{t}{k}\right]. The resulting capacitance, with the slab in place, is therefore C=QV=ϵ0A(d−t)+t/kC=\dfrac{Q}{V}=\dfrac{\epsilon_0A}{(d-t)+t/k} -- always GREATER than the bare C0=ϵ0A/dC_0=\epsilon_0A/d, since k>1k>1 for any real dielectric makes the effective denominator smaller than dd alone. …

Figure 8.29Fig. 8.29: Dielectric slab in the capacitor
Fig. 8.29 — Fig. 8.29: Dielectric slab in the capacitor

Drawn by us to help you understand the concept clearly, and verified to make sure it's accurate. For exams, practice from your textbook's own diagram.

What this figure shows. A parallel plate capacitor with plates separated by distance d, and a dielectric slab of thickness tt (with t<dt<d) inserted between them, occupying only part of the gap; the applied field E0E_0 is drawn as arrows spanning the full gap, while inside the slab itself a shorter, oppositely-directed arrow for the induced polarisation field EpE_p is drawn, together with the induced surface charge layers −Qp-Q_p and +Qp+Q_p marked on the slab's own near and far faces respectively -- the geometric set-up for deriving both the reduced net field E=E0−EpE=E_0-E_p inside the dielectric and t …

Figure 8.30Fig. 8.30: Capacitor filled with n dielectric slabs
Fig. 8.30 — Fig. 8.30: Capacitor filled with n dielectric slabs

Drawn by us to help you understand the concept clearly, and verified to make sure it's accurate. For exams, practice from your textbook's own diagram.

What this figure shows. A parallel plate capacitor whose full gap between the plates is filled with nn distinct dielectric slabs stacked one after another (like layers), each of its own thickness t1,t2,…,tnt_1,t_2,\ldots,t_n (summing to the total plate separation dd) and its own dielectric constant k1,k2,…,knk_1,k_2,\ldots,k_n -- the layered picture used to justify treating such a stack as nn capacitors in SERIES, one per slab, each contributing its own term ti/kit_i/k_i to the combin …

Misc Ex.17Example 8.17: Parallel plate capacitor, without and with a k=6.7 dielectric

Worked out. A parallel plate capacitor has plate area A=4 cm2=4×10−4 m2A=4\text{ cm}^2=4\times10^{-4}\,\text{m}^2 and separation d=2 mm=2×10−3d=2\text{ mm}=2\times10^{-3} m. (i) Without a dielectric: C=ϵ0Ad=8.85×10−12×4×10−42×10−3≈1.77×10−12C=\dfrac{\epsilon_0 A}{d}=\dfrac{8.85\times10^{-12}\times4\times10^{-4}}{2\times10^{-3}}\approx1.77\times10^{-12} F. (ii) With the gap COMPLETELY filled by a dielectric of constant k=6.7k=6.7: C′=kC=ϵ0Ad×6.7≈11.86×10−12C'=kC=\dfrac{\epsilon_0 A}{d}\times6.7\approx11.86\times10^{-12} F -- a direct before/after comparison showing the capacitance rising by exactly the factor k=6.7k=6.7 once the dielectric fully occupies the gap, exactly matching special case (1) de …

Misc Ex.18Example 8.18: New capacitance after inserting a partial dielectric slab

Worked out. A capacitor of C0=20 μFC_0=20\,\mu F has plates d=2 mm=2×10−3d=2\,\text{mm}=2\times10^{-3} m apart. A dielectric slab of thickness t=1 mm=1×10−3t=1\,\text{mm}=1\times10^{-3} m and constant k=2k=2 is inserted (occupying only HALF the gap). Using C=ϵ0A(d−t)+t/kC=\dfrac{\epsilon_0 A}{(d-t)+t/k} and dividing by the original C0=ϵ0A/dC_0=\epsilon_0 A/d: CC0=d(d−t)+t/k=2×10−3(2−1)×10−3+1×10−32=2×10−31.5×10−3\dfrac{C}{C_0}=\dfrac{d}{(d-t)+t/k}=\dfrac{2\times10^{-3}}{(2-1)\times10^{-3}+\frac{1\times10^{-3}}{2}}=\dfrac{2\times10^{-3}}{1.5\times10^{-3}}, so C=20 μF×21.5≈26.67 μFC=20\,\mu F\times\dfrac{2}{1.5}\approx26.67\,\mu F -- the capacitance rises, but by LESS than the full factor of k=2k=2, since the dielectric here fills only half …