Q.Draw the schematic cross section of power diode.

The schematic cross section shows the three doped layers of the power diode stacked vertically between metal contacts.

[!ANSWER]

Draw a vertical stack: the Anode (A) terminal on an anode-metallization plate at the top, then a p+ layer ($\approx 10^{19}$ atoms/cm$^3$), then a lightly-doped n- epitaxial (drift) layer ($\approx 10^{14}$ atoms/cm$^3$), then an n+ substrate/cathode layer ($\approx 10^{19}$ atoms/cm$^3$), and a cathode-metallization plate with the Cathode (K) terminal at the bottom.

[!TLDR]

A vertical p+ / n- (drift) / n+ stack between anode and cathode metallizations, A at top and K at bottom.

The schematic cross section of a power diode is a vertical layered structure. From top to bottom: the Anode (A) terminal connects through an anode-metallization plate to a heavily-doped p+ layer ($\approx 10^{19}$ atoms/cm$^3$); below it lies the lightly-doped n- epitaxial layer, called the drift region ($\approx 10^{14}$ atoms/cm$^3$), which provides the wide depletion region for reverse blocking; below that is the heavily-doped n+ substrate that forms the cathode ($\approx 10^{19}$ atoms/cm$^3$); finally a cathode-metallization plate connects to the Cathode (K) terminal at the bottom.

[!ANSWER]

Vertical stack: Anode (A) — anode metallization — p+ ($10^{19}$) — n- drift/epitaxial ($10^{14}$) — n+ substrate/cathode ($10^{19}$) — cathode metallization — Cathode (K).