Q.Explain V-I Characteristics of a power diode.
[!TLDR]
Forward: small current up to , then a linear rise set by ; reverse: small leakage up to , then avalanche.
The static V-I characteristic of a power diode is drawn with forward current (and voltage) in the first quadrant and reverse current (and voltage) in the third quadrant.
Forward characteristic: For small forward voltages, below the knee (threshold) voltage (about 0.7 V for silicon), only a very small current flows. Once the junction is forward biased beyond the knee, the current increases, but because of the ohmic resistance of the lightly doped drift region the increase is an almost straight line rather than the sharp exponential of a signal diode. The forward drop follows
so the forward branch is linearised with a slope determined by .
Reverse characteristic: When reverse biased, the diode carries only a small, nearly constant reverse leakage (saturation) current, since the depletion region blocks conduction. This continues up to the reverse breakdown voltage (the peak reverse voltage rating). Beyond avalanche multiplication sets in and the reverse current rises steeply, which can damage the device.
Key points marked on the curve are the forward knee , the linear forward conduction region, the small reverse leakage, and the reverse breakdown .
[!ANSWER]
The power-diode V-I curve has a forward branch that stays low until and then rises almost linearly (slope set by , ), and a reverse branch of small leakage up to , beyond which avalanche breakdown occurs.
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